射频磁控溅射技术制备Ge-SiO2薄膜的结构和光学特性研究Study on Structure and Optical Properties of Ge-SiO2 Films Prepared by RF Sputtering
栾彩霞,柴跃生,孙钢,马志华,张敏刚
摘要(Abstract)：
用射频共溅射技术和后退火的方法,制备出埋入SiO2基质中的Ge纳米晶复合膜(ncGe/SiO2)。用XRD对薄膜的晶体结构进行了测试,未经退火的样品呈现非晶状态,600℃退火后的薄膜中开始有Ge纳米晶粒出现。研究了薄膜的Raman散射光谱,发现了其红移和宽化现象。测量了薄膜的光致发光谱,所有样品都在394nm处发出很强的光,随着Ge纳米晶粒的出现,样品有310nm和625nm处的光发出,其强度随晶粒平均尺寸的增大而增强。
关键词(KeyWords)： Ge纳米晶;XRD;拉曼散射;光致发光
基金项目(Foundation): 山西省自然科学基金资助项目(20041073)
作者(Author): 栾彩霞,柴跃生,孙钢,马志华,张敏刚
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